Development of GaN HEMT for Microwave Wireless Communications
نویسندگان
چکیده
Gallium Nitride (GaN) devices are desirable for the application of high-power and high-speed operation electron devices because of their excellent properties such as large energy band gap and high saturated electron velocity. We have already developed and produced GaN HEMTs*1 on SiC substrate targeting the frequency range of L/S-band mainly for the amplifier used in cellular base stations. The operating frequency is up to 3.5 GHz.
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